2SC3072 2002-07-23 1 toshiba transistor silicon npn epitaxial type (pct process) 2SC3072 strobe flash applications medium power amplifier applications high dc current gain : h fe = 140 to 450 (v ce = 2 v, i c = 0.5 a) : h fe = 70 (min) (v ce = 2 v, i c = 4 a) low collector saturation voltage : v ce (sat) = 1.0 v (max) (i c = 4 a, i b = 0.1 a) high power dissipation : p c = 10 w (tc = 25c), p c = 1.0 w (ta = 25c) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 50 v v ces 40 collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 8 v dc i c 5 collector current pulse (note 1) i cp 8 a base current i b 0.5 a ta = 25c 1.0 collector power dissipation tc = 25c p c 10 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: pulse test: pulse width = 10 ms (max), duty cycle = 30% (max) unit: mm jedec D jeita D toshiba 2-7b1a weight: 0.36 g (typ.) jedec D jeita D toshiba 2-7j1a weight: 0.36 g (typ.)
2SC3072 2002-07-23 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 40 v, i e = 0 D D 100 na emitter cut-off current i ebo v eb = 8 v, i c = 0 D D 100 na collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 20 D D v h fe (1) (note 2) v ce = 2 v, i c = 0.5 a 140 D 450 dc current gain h fe (2) v ce = 2 v, i c = 4 a 70 D D collector emitter saturation voltage v ce (sat) i c = 4 a, i b = 0.1 a D D 1.0 v base-emitter voltage v be v ce = 2 v, i c = 4 a D D 1.5 v transition frequency f t v ce = 2 v, i c = 0.5 a D 100 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 40 D pf note 2: h fe (1) classification a: 140 to 240, b: 200 to 330, c: 300 to 450 marking explanation of lot no. month of manufacture: january to december are denoted by letters a to l respectively. year of manufacture: last decimal digit of the year of manufacture c3072 product no. lot no. h fe classification
2SC3072 2002-07-23 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (ma) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) base-emitter voltage v be (v) i c ? v be collector current i c (a) common emitter v ce = 2 v 0 0 2 tc = 100c 4 8 0.4 0.8 1.2 1.6 25 ? 25 6 2.0 0.1 0.01 common emitter v ce = 2 v tc = 100c 30 0.03 0.3 1 50 100 300 500 1000 ? 25 25 3 10 10 common emitter tc = 25c 0 0 10 2 i b = 10 ma 4 8 1 2 3 4 5 50 70 150 200 30 0 20 6 6 100 0.01 common emitter i c /i b = 40 tc = 100c 0.05 0.03 0.1 0.3 1 0.1 0.3 0.5 1 3 ? 25 25 3 10 0.03 collector current i c (a) collector-emitter voltage v ce (v) safe operating area ambient temperature ta (c) p c ? ta collector power dissipation p c (w) 12 0 0 (1) tc = ta infinite heat sink (2) ceramic substrate 50 50 0.8 mm (3) no heat sink 25 50 75 100 125 150 175 2 4 6 8 10 (1) (2) (3) *: single nonrepetitive pulse tc = 2 5 c **: pulse width = 10 ms (max) duty cycle = 30 (max) curves must be derated linearly with increase in temperature. 0.1 0.3 i c max (continuous) i c max (pulsed)** dc operation tc = 25c 10 30 1 3 0.3 0.5 1 3 5 10 ms* 10 100 ms* 1 ms* v ceo max
2SC3072 2002-07-23 4 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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